BSP 60 E6433

BSP60-BSP62 PNP Silicon Darlington Transistor • High collector current 4 • Low collector-emitter saturation voltage 3 2 • Complementary types: BSP50...BSP52 (NPN) 1 • Pb-free (RoHS compliant) package • Qualified according AEC Q101 Type Marking Pin Configuration Package BSP60 BSP60 1=B 2=C 3=E 4=C - - SOT223 BSP61 BSP61 1=B 2=C 3=E 4=C - - SOT223 BSP62 BSP62 1=B 2=C 3=E 4=C - - SOT223 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO Value V BSP60 45 BSP61 60 BSP62 80 Collector-base voltage Unit VCBO BSP60 60 BSP61 80 BSP62 90 Emitter-base voltage VEBO 5 Collector current IC 1 Peak collector current, tp ≤ 10 ms ICM 2 Base current IB 100 mA Total power dissipation- Ptot 1.5 W Junction temperature Tj 150 °C Storage temperature Tstg A TS ≤ 124 °C 1 -65 ... 150 2011-10-04 BSP60-BSP62 Thermal Resistance Parameter Symbol Junction - soldering point1) RthJS Value Unit ≤ 17 K/W Values Unit Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol min. typ. max. DC Characteristics Collector-emitter breakdown voltage V V(BR)CEO IC = 10 mA, IB = 0 , BSP60 45 - - IC = 10 mA, IB = 0 , BSP61 60 - - IC = 10 mA, IB = 0 , BCP62 80 - - IC = 100 µA, IE = 0 , BSP60 60 - - IC = 100 µA, IE = 0 , BSP61 80 - - IC = 100 µA, IE = 0 , BSP62 90 - - V(BR)EBO 5 - - ICES - - 10 µA IEBO - - 10 µA Collector-base breakdown voltage V(BR)CBO Emitter-base breakdown voltage IE = 100 µA, IC = 0 Collector-emitter cutoff current VCE = VCE0max , VBE = 0 Emitter-base cutoff current VEB = 4 V, IC = 0 DC current gain2) - hFE IC = 150 mA, VCE = 10 V 1000 - - IC = 500 mA, VCE = 10 V 2000 - - Collector-emitter saturation voltage2) V VCEsat IC = 500 mA, IB = 0.55 mA - - 1.3 IC = 1 A, IB = 1 mA - - 1.8 IC = 500 mA, IB = 0.5 mA - - 1.9 IC = 1 A, IB = 1 mA - - 2.2 - 200 - Base emitter saturation voltage2) VBEsat AC Characteristics Transition frequency fT MHz IC = 100 mA, VCE = 5 V, f = 100 MHz 1For calculation of R thJA please refer to Application Note AN077 (Thermal Resistance Calculation) 2Pulse test: t < 300µs; D < 2% 2 2011-10-04 BSP60-BSP62 Switching time test circuit Switching time waveform 0V 10% 90% Vin 10% Vout -VCC 90% 90% 10% td tr ts tf t off t on 3 EHN00068 2011-10-04 BSP60-BSP62 DC current gain hFE = ƒ(IC) VCE = 10 V 10 5 h FE Collector-emitter saturation voltage IC = ƒ(VCEsat ), IB = Parameter BSP 60...62 EHP00667 10 3 5 ΙC BSP 60...62 EHP00669 mA 5 Ι B = 0.5 mA 10 4 4 mA 5 10 2 5 10 3 5 10 2 10 1 10 2 10 3 10 1 mA 10 4 0 V 1 ΙC Transition frequency fT = ƒ(IC) VCE = 10 V, f = 100 MHz Base-emitter saturation voltage IC = ƒ(VBEsat), IB = Parameter 10 3 ΙC BSP 60...62 2 V CE sat EHP00670 10 3 BSP 60...62 EHP00668 MHz mA fT 5 5 Ι B = 0.5 mA 4 mA 10 2 10 2 5 5 10 1 0 1 2 V 10 1 10 1 3 5 10 2 mA 10 3 ΙC V BE sat 4 2011-10-04 BSP60-BSP62 Collector-base capacitance Ccb = ƒ(VCB) Total power dissipation P tot = ƒ(TS) Emitter-base capacitance Ceb = ƒ(VEB) 22 1650 mW pF 1350 1200 16 Ptot CCB(CEB ) CEB 18 14 1050 900 12 750 10 600 8 450 6 300 4 150 CCB 2 0 4 8 12 16 V 0 0 22 15 30 45 60 75 90 105 120 VCB(VEB Permissible Pulse Load External resistance RBE = ƒ (TA)** Ptotmax/PtotDC = ƒ(tp ) VCB = VCEmax °C 150 TS ** RBEmax for thermal stability 10 3 BSP 60...62 Ptot max Ptot DC 10 7 EHP00273 tp D= T tp R BE BSP 60...62 EHP00666 Ω 5 T 10 2 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 10 1 10 6 5 5 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 5 10 0 tp 0 50 100 ˚C 150 TA 5 2011-10-04 Package SOT223 1.6±0.1 6.5 ±0.2 A 0.1 MAX. 3 ±0.1 7 ±0.3 3 2 0.5 MIN. 1 2.3 0.7 ±0.1 B 15˚ MAX. 4 3.5 ±0.2 Package Outline BSP60-BSP62 4.6 0.28 ±0.04 0...10˚ 0.25 M A 0.25 M B Foot Print 1.4 4.8 1.4 3.5 1.2 1.1 Marking Layout (Example) Manufacturer 2005, 24 CW Date code (YYWW) BCP52-16 Type code Pin 1 Packing Reel ø180 mm = 1.000 Pieces/Reel Reel ø330 mm = 4.000 Pieces/Reel 0.3 MAX. 7.55 12 8 Pin 1 1.75 6.8 6 2011-10-04 BSP60-BSP62 Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany  2009 Infineon Technologies AG All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 7 2011-10-04